Download Large-Current Driving Applications

2SB926 / 2SD1246
2SB926 / 2SD1246
Ordering number : EN1030F
PNP / NPN Epitaxial Planar Silicon Transistors
Large-Current Driving Applications
Applications
•
Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB926
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
(--)30
Collector-to-Emitter Voltage
VCBO
VCEO
(--)25
V
Emitter-to-Base Voltage
VEBO
(--)6
V
IC
ICP
(--)2
A
Collector Current (Pulse)
(--)5
A
Collector Dissipation
PC
0.75
W
Collector Current
Junction Temperature
Tj
Storage Temperature
Tstg
V
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)20V, IE=0A
(--)0.1
µA
Emitter Cutoff Current
IEBO
hFE1
VEB=(--)4V, IC=0A
(--)0.1
µA
VCE=(--)2V, IC=(--)100mA
hFE2
VCE=(--)2V, IC=(--)1.5A, pulse
fT
Cob
VCE=(--)10V, IC=(--)50mA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
VCB=(--)10V, f=1MHz
100*
65
560*
130
150
(32)19
MHz
pF
Continued on next page.
* : The 2SB926 / 2SD1246 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
U
280 to 560
www.onsemi.com
Rev.0 I Page
1 of 4 I www.onsemi.com
Publication Order Number:
2SB926_2SD1246/D
2SB926 / 2SD1246
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
min
IC=(--)1.5A, IB=(--)75mA, pulse
IC=(--)1.5A, IB=(--)75mA
Unit
typ
max
(--0.35)0.18
(--0.6)0.4
V
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
V
V(BR)CEO
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
(--)30
Collector-to-Emitter Breakdown Voltage
(--)25
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10µA, IC=0A
(--)6
V
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
5.0
4.0
14.0
0.6
2.0
0.45
0.5
0.45
0.44
1 2 3
IC -- VCE
2SB926
From top
--250mA
--200mA
--150mA
--100mA
--50mA
--40mA
--30mA
--1.2
2SD1246
mA
--10mA
--8mA
--6mA
--0.8
--4mA
--2mA
--0.4
0
--200
--400
--600
--800
A
40m
20m
1.6
1.2
10mA
8mA
6mA
0.8
4mA
0.4
IB=0mA
0
30
A
0
--2
mA
A
--1.6
IC -- VCE
2.0
Collector Current, IC -- A
--2.0
Collector Current, IC -- A
SANYO : NP
1.3
50m
1.3
1 : Emitter
2 : Collector
3 : Base
--1000
2mA
IB=0mA
0
0
Collector-to-Emitter Voltage, VCE -- mVITR08779
Rev.0 I Page 2 of 4 I www.onsemi.com
200
400
600
800
1000
Collector-to-Emitter Voltage, VCE -- mVITR08780
2SB926 / 2SD1246
IC -- VBE
VCE=2V
3
2SB
926
DC Current Gain, hFE
2.4
1.6
1.2
0.8
2SD
1246
2
2SB
926
100
7
5
3
2
10
0.4
For PNP, minus sign is omitted.
7
For PNP,
5
2 3
0.01
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
2
0.1
3
5
2
1.0
3
Collector Current, IC -- A
5
10
ITR08782
Cob -- VCB
2
f=1MHz
3
Output Capacitance, Cob -- pF
5
2SD1246
2
2SB926
100
7
5
3
100
7
5
2SB
926
3
2SD
124
2
6
2
For PNP, minus sign is omitted.
10
10
2
3
5
7 100
For PNP, minus sign is omitted.
2
3
5
7 1000
Collector Current, IC -- mA
2
10
1.0
3
Collector Current, IC -- A
5
3
2
26
B9
2S 1246
D
2S
3
2
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
10
IC=2A
2
DC
5
0.1
2
600
400
200
0
40
60
80
100
120
140
7
10
s
s
n
2SB926 / 2SD1246
For PNP, minus sign is omitted.
1ms to 100ms : Single pulse
Ta=25°C
ITR08785
Ambient Temperature, Ta -- °C
m
tio
2
800
750
20
0m
op
era
3
2SB926 / 2SD1246
0
10
1.0
PC -- Ta
1000
5
ITR08784
ASO
3
2
For PNP, minus sign is omitted.
7 0.01
3
ICP=5A
5
5
2
10
s
3
1.0
7
1m
5
3
2
0.01
5
10
5
5
3
Collector-to-Base Voltage, VCB -- V
IC / IB=20
0.1
2
ITR08783
VCE(sat) -- IC
10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
VCE=10V
7
Collector Dissipation, PC -- mW
minus sign is omitted.
ITR08781
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
VCE=2V
7
5
2.0
hFE -- IC
1000
2.8
2SD1
246
Collector Current, IC -- A
3.2
160
ITR08786
Rev.0 I Page 3 of 4 I www.onsemi.com
3
5
7
1.0
2
3
5
2
3
5
Collector-to-Emitter Voltage, VCE -- V ITR08787
2SB926 / 2SD1246
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products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
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protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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2SB926_2SD1246/D