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FQP10N50CF / FQPF10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
• 10 A, 500 V, RDS(on) = 610 mΩ(Max.) @VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode
D
G
G DS
TO-220
TO-220F
GD S
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
FQP10N50CF
500
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
FQPF10N50CF
- Pulsed
(Note 1)
Unit
V
10
10*
A
6.35
6.35*
A
40
40*
A
± 30
V
388
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25°C)
4.5
143
- Derate above 25°C
1.14
V/ns
48
W
0.38
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP10N50CF
FQPF10N50CF
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.87
2.58
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
1
www.BDTIC.com/FAIRCHILD
FQP10N50CF / FQPF10N50CF N-Channel MOSFET
March 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP10N50CF
FQP10N50CF
TO-220
-
-
50
FQPF10N50CF
FQPF10N50CF
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA, TJ = 25°C
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
10
µA
VDS = 400 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.5
0.61
Ω
--
15
--
S
--
1610
2096
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5 A
gFS
Forward Transconductance
VDS = 40 V, ID = 5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
177
230
pF
--
16
24
pF
--
29
67
ns
--
80
170
ns
--
141
290
ns
--
80
165
ns
--
43
56
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 10 A
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 10 A
VGS = 10 V
(Note 4, 5)
--
7.5
--
nC
--
18.5
--
nC
10
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 10 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10 A
dIF/dt =100 A/µs
--
µC
(Note 4)
--
50
--
0.1
ns
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 7 mH, IAS = 10 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
2
www.BDTIC.com/FAIRCHILD
FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Package Marking and Ordering Information
FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
-1
10
-1
10
-1
0
10
1
10
10
2
4
6
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
8
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
VGS = 10V
1.0
VGS = 20V
0.5
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
25℃
※ Note : TJ = 25℃
-1
0
5
10
15
20
25
30
10
35
0.2
0.4
0.6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
4000
1.4
VDS = 100V
10
Coss
* Note :
1. VGS = 0 V
2. f = 1 MHz
2000
1000
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1.0
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
3000
0.8
VSD, Source-Drain voltage [V]
Crss
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 10A
0
-1
10
0
10
0
10
1
© 2006 Fairchild Semiconductor Corporation
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FQP10N50CF / FQPF10N50CF Rev. C0
0
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3
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FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 5.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
for FQP10N50CF
Figure 9-2. Maximum Safe Operating Area
for FQPF10N50CF
2
2
10
10
10 µs
10 µs
100 µs
1
1
1ms
10
10
10ms
100ms
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
DC
0
10
Operation in This Area
is Limited by R DS(on)
-1
10
* Notes :
o
1. TC = 25 C
1ms
10ms
100ms
0
10
Operation in This Area
is Limited by R DS(on)
DC
-1
10
* Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
o
2. TJ = 150 C
3. Single Pulse
-2
-2
10
0
1
10
2
10
10
3
10
10
0
10
VDS, Drain-SourceVoltage[V]
1
10
2
10
3
10
VDS, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current
vs. Case Temperature
12
ID, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
4
www.BDTIC.com/FAIRCHILD
FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N50CF
0
10
Z? JC(t), Thermal Response
D=0.5
0.2
-1
0.1
10
0.05
PDM
0.02
t1
0.01
* Notes :
0
1. Z? JC(t) = 0.87 C/W
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
-2
10
single pulse
-5
-4
10
10
t2
-3
10
-2
10
-1
0
10
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF10N50CF
D=0.5
0
Z? JC(t), Thermal Response
10
0.2
0.1
0.05
-1
10
PDM
0.02
t1
0.01
-2
10
single pulse
-5
10
-4
10
-3
10
t2
* Notes :
0
1. Z? JC(t) = 2.58 C/W
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
-2
10
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
5
www.BDTIC.com/FAIRCHILD
FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
6
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FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
www.fairchildsemi.com
7
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FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
www.fairchildsemi.com
8
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FQP10N50CF / FQPF10N50CF N-Channel MOSFET
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
9
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
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© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
10
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FQP10N50CF / FQPF10N50CF N-Channel MOSFET
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