Download Dhawan_Twepp_09

Progress on DC-DC converters for
SiTracker for SLHC
S. Dhawan, O. Baker, H. Chen, R. Khanna, J. Kierstead, F. Lanni,
D. Lynn, A. Mincer,
C. Musso S. Rescia, H. Smith, P. Tipton, M. Weber
Yale University, New Haven, CT USA
Brookhaven National Laboratory, Upton, NY USA
Rutherford Appleton Laboratory, Chilton, Didcot, UK
National Semiconductor Corp, Richardson, TX, USA
New York University, New York, NY, USA
1
Length of Power Cables = 140 Meters
10 Chip Hybrid – SCT Module
for LHC
20 Chip Hybrid – Si Tr
Module for Hi Luminosity
20 Chip Hybrid – Si Tr
Module for Hi Luminosity
3.5 V
Cable Resistance = 4.5 Ohms
1.5 amps
Voltage Drop = 10.8V
2.4 amps
2.4 amps
10.25 V
Voltage Drop = 6.75 V
1.3 V
1.3 V
4088 Cables
X 10
DC-DC
Power
Converter
13 V
Voltage Drop = 1.08 V
0.24 amps
12.1V
Counting
House
14.08 V
Power Delivery with Existing SCT Cables (total = 4088)
Resistance = 4. 5 Ohms
100
Power Efficiency %
90
80
70
60
Efficiency
50
40
30
20
10
0
3.5 V @ 1.5 amps
1.3 V @ 2.4 amps
Voltage @ Load
1.3 V @ 2.4 amps
with x10 Buck
switcher. Efficiency
90%
2
Agenda
Learning from Commercial Devices
 Buck > Voltage, EMI
 Plug In Cards for ABCN2.5 Hybrids - Noise Tests @Liverpool




Require Radiation resistance & High Voltage operation
Thin Oxide
High Voltage with Thin Oxide ?
DMOS, Drain Extension 12V @ 5 nm , 20V @ 7 nm
 HEMPT has no Oxide – Higher Voltage ? 200 Mrads 20V
3
Buck Regulator Efficiency after 100 Mrad dosage
80
Power Efficiency %
75
After
Exposure
70
65
60
Enpirion EN5360
Before
Exposure
 Found out at Power Technology conference 0.25 µm Lithography
55
 Irradiated Stopped on St.
 No effects after 100 Mrads
 Noise tests at Yale, RAL & BNL.
50
Valentines Day 2007
45
 20 µm Al is good shield for Air Coils
 All other devices failed, even other part numbers from Enpirion
40

0
We reported @ TWEPP 2008 - IHP was foundry
1
2
3
4
5
6
for EN5360
 What makes Radiation
Hardness
? Amps
Output
Current
 Chinese Company Devices
4
Synchronous Buck Converter
Control Switch
30 mΩ
Power
Stage
High
Volts
Synch Switch
20 mΩ
Error Amp
80.5
Controller
Low Voltage
Pulse Width Controller
V reference
Efficiency (%)
Power Stage Drivers
78.4
75.2
Buck Safety
Input Voltage (8-14 V)
100 ns
900 ns
Minimum Switch ON Time
Limits Max Frequency
Control
Vout = 10%
Synch
500 ns
Vout = 50%
500 ns
Control Switch: Switching Loss > I2
Synch Switch: Rds Loss Significant
Control
Synch
5
EMI Antenna Loops
Control
Q1Switch
Q2
Current is switched from Q1 to Q2 with minimum Impedance change
Advice form a company application note
Since the switching noise is generated primarily by the power stage of the supply, careful layout
of the power components should take place before the small signal components are placed and
routed. The basic strategy is to minimize the area of the loops created by the power components
and their associated traces. In the synchronous buck converter shown above the input (source)
loop #1 ideally consists of a DC current with a negligible AC ripple. Loop numbers 2 and 3 are
the power switch loops. The current in these loops is composed of trapezoidal pulses with large
peaks and fast edges (di/dt and dv/dt). The area of these loops will be determined primarily by
how close together the power components, the inductor, and the capacitors Cin and Cout can be
placed. The closer the components, the shorter the PCB traces connecting them, and therefore
the smaller loop area.
6
Requirements
Voltage Ratio > 8
For Good Efficiency Iout >3 amps
Air Coil / Magnetics
Radiation Hardness
Output Voltage
Tolerance +/- 5%
Vin = 2.5 – 17 V
GND
Enable
Vout = 2.5 / 1.3 V
Small
Plug-in Card
GND
Absolute Max 10%
For Long Lifetime
Power Good
Load
0.25 µm Technology Test ASIC 2.5 V @ ~ 3 amps. Actual 5 amps
0.13 µm Technology ASIC
1.3 V @ ?
7
Plug in Card – Power Yale Model 2151
Shielded Buck Inductor
Coupled Inductor
Connected in Series
Shielding Spiral – One end to GND
Spiral Coils Resistance in mΩ
3 Oz
10 mil Cu
Top
Bottom
57
46
19.4
17
Shielding Spiral – One end to GND
4 layers
Layer1: Top Coil with no connection - Shield
Layer2: coil Connect in series
Layer3: coil Connect in series
Layer4: Bottom Coil with no connection- Shield
Spacing between Layer 2 & 3 = 14 mills ( 0.35 MM) Proximity Effect
Top & Bottom can be more as there is no loss from these
8
Power IN
Enable / Disable
Power Good Out
Power Out
Kelvin points for Vin & Vout
Yale University April 09, 2009
Model 2151_Max8654
9
MAX8654 with embedded coils (#12), external coils (#17) or Renco Solenoid (#2)
Vout=2.5 V
100
90
Solenoid
80
Copper Coils
Efficiency (%)
70
PCB embedded Coil
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Output current (amps)
MAX #12, Vin = 11.9 V
MAX #17, Vin = 11.8 V
MAX #2, Vin = 12.0 V
10
Monolithic: 14V, 8A, 1.2MHz
Multichip: 16V, 8A, 1.5MHz
Plug In Card: DC-DC Powering
Coil
Board #
Solenoid
2 Different ICs
3 Different Coils
Common
Power
Input Noise
Mode Choke
To Dc_DC
Electrons rms
Max # 2
No
881
"
"
885
IR # 17
No
Switching
666
"
"
Yes
"
634
"
"
Yes
Linear
664
Max 12
No
Linear
686
"
Yes
"
641
"
Copper Coil
Embedded
"
All Channels
Trimmed
"
Yale Model 2151a
"
Yes
"
Embedded 3 oz Cu
Etched Cu Foils 0.25 mm
Solenoid without Ferrite
648
11
Noise
Same with Linear or DC - DC
Shield 20 µm Al Foil
Sensor 1 cm from Coil
Noise
NO change with
Plug in card
on top
12
Can We Have
High Radiation Tolerance & Higher Voltage Together ???
Controller : Low Voltage
High Voltage: Switches –
LDMOS, Drain Extension, Deep Diffusion etc
>> 20 Volts HEMT GaN on Silicon, Silicon Carbide, Sapphire
13
Thin Gate Oxide
Book ‘Ionizing Radiation Effects in MOS Oxides’ Author Timothy R. Oldham
Thin oxide implies lower operating voltage
14
LDMOS Structure
Laterally Diffused
Drain Extension
High Voltage / high Frequency
Main market. Cellular base stations
High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C
BiCMOS technology: IHP Microelectronics
Electron Devices Meeting, 2001. IEDM Technical Digest. International
2-5 Dec. 2001 Page(s):40.4.1 - 40.4.4
15
R. Sorge et al , IHP Proceedings of SIRF 2008 Conference
High Voltage Complementary Epi Free LDMOS Module with 70 V
PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform
16
IBM Foundry Oxide Thickness
Lithography
Process
Operating
Oxide
Name
Voltage
Thickness
nm
0.25 µm
0.13 µm
6SF
8RF
2.5
5
3.3
7
1.2 & 1.5
2.2
2.2 & 3.3
5.2
17
Non IBM Foundry ICs
Company
IHP
Device
Process
Foundry
Oxide
Time in
Dose before
Observation
Name/ Number
Name
Thickness
Seconds
Damage seen
Damage Mode
Country
nm
ASIC custom
SG25V GOD
IHP, Germany
5
53 Mrad
slight damage
XySemi
FET 2 amps
HVMOS20080720
China
7
52 Mrad
minimal damage
XySemi
XP2201
HVMOS20080720
China
7
In Development
XySemi
XPxxxx
China
7
In Development
Synch Buck
XySemi
XP5062
China
12.3
800
44 krad
loss of Vout regulation
20
420
23 krad
abrupt failure
HVMOS20080720
TI
TPS54620
LBC5 0.35 µm
loss of Vout regulation
IR
IR3841
9 & 25
230
13 Krads
Enpirion
EN5365
CMOS 0.25 µm
Dongbu HiTek,
Korea
5
11,500
85 krad
Enpirion
EN5382
CMOS 0.25 µm
Dongbu HiTek,
Korea
5
2000
111 Krads
Enpirion
EN5360 #2
SG25V (IHP)
IHP, Germany
5
22 Days
100 Mrads
Minimal Damage
Enpirion
EN5360 #3
SG25V (IHP)
IHP, Germany
5
10 Days
48 Mrads
Minimal Damage
Increasing Input
Current,
loss of Vout regulation
18
For Higher Radiation Resistance
 Oxide Thickness is predominant Effect
 Others Epi Free processing is Good ?
 Oxide Processing is standard
 ?????
19
From China
20
IHP NMOS Transistor
VG versus ID at Selected Gamma Doses
2.5
IHP PMOS Transistor
VG versus ID at selected Gamma Doses
1
Pre-Irradiation
2
13 Mrad
0.8
Pre-irradiation
22 Mrad
ID (mA)
13 Mrad
22 Mrad
1.5
ID (mA)
35 Mrad
1
35 Mrad
0.6
53 Mrad
0.4
0.5
0.2
0
0.5
1
VG (Volts)
1.5
2
0
2.5
0
0.5
1
1.5
2
2.5
VG (Volts)
XY Semi (VD = 12V)
2 Amp FET- HVMOS20080720 Process
Id (Amps)I
0
0.12
0.1
0.08
0.06
0.04
0.02
0
0 rad
1 Mrad
5.4 Mrad
33 Mrad
52 Mrad
0
0.5
1
Vg (Volts)
1.5
21
Depletion Mode
Normally ON
Enhancement Mode
Normally OFF
22
GaN for Power Switching
23
Gallium Nitride Devices under Tests
RF GaN 20 Volts & 0.1 amp
 8 pieces: Nitronex NPT 25015: GaN on Silicon
 Done Gamma, Proton & Neutrons
 65 volts Oct 2009
 2 pieces: CREE CGH40010F: GaN on siC
 6 pieces: Eudyna EGNB010MK: GaN on siC
 Done Neutrons
Switch GaN
 International Rectifier GaN on Silicon
Under NDA
Gamma: @ BNL
Protons: @ Lansce
Neutrons: @ U of Mass Lowell
Plan to Expose same device to
Gamma, Protons & Neutrons
24
Nitronex 25015
Serial # 1
0.12
ID Amps
0.1
0.08
4.2 Mrad
0.06
0 rad
0.04
17.4 Mrad
0.02
0
-2.5
-2.3
-2.1
-1.9
-1.7
-1.5
-1.3 VGS Volts
25
No change in the average current for 200 Mega rads
Pomona Box
30 meter Coax
1Ω
330 2 Watts
Source
DMM
DC mV
Drain
~ 0.070 Amps
Reading = ~ 0.035 Amps
@ 50% Duty Cycle
HEMT
Pulse
Generator
0.1 – 2 MHz
0 to -5 V
Gate
Power
Supply
V out = 20
100
50 % Duty
Cycle
50 Ω.
Terminator
GND
Powered
FET
S
D
2 Shorted
FETs
G
26
July 28. 2009
FET Setup for Proton Radiation Exposure @ LANSCE
IR’s basic current GaN-on-Si based device structure is a high electron mobility transistor (HEMT), based on the presence of a
two dimensional electron gas (2DEG) spontaneously formed by the intimacy of a thin layer of AlGaN on a high quality GaN
surface as shown in Figure 1. It is obvious that the native nature of this device structure is a HFET with a high electron
mobility channel and conducts in the absence of applied voltage (normally on). Several techniques have been developed to
provide a built-in modification of the 2DEG under the gated region that permits normally off behavior.
Aside from providing high quality, reliable and a low-cost CMOS compatible device manufacturing process, the GaNpowIR
technology platform also delivers dramatic improvements in three basic figures of merit (FOMs), namely specific on- 27
resistance RDS(on), RDS(on)*Qg and efficiency*density/cost.
Intel won’t disclose any details till product is announced
28
Conclusions
Learned from commercial Devices,
Companies & Power conferences
 Can get high Radiation Tolerance & Higher Voltage
High Frequency > Smaller Air coil > Less Material
 Goal: ~20 MHz Buck, MEM on Chip size 9 mm x 9mm
Power SOC: MEMs Air Core Inductor on Chip
 Study Feasibility 48 / 300V Converters
Irradiation: Run @ Max operating V & I.
Limit Power Dissipation by Switching duty cycle
Online Monitoring during irradiation for faster results
Yale Plug Cards can be loaned for Evaluation
Collaborators are Welcome
29
Working on Power Supply
Is not Glamorous
Neither it on Top of the World
The End
30