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R6020KNJ
Nch 600V 20A Power MOSFET
Datasheet
l Outline
VDSS
600V
TO-263
RDS(on)(Max.)
0.196Ω
SC-83
ID
±20A
LPT(S)
PD
231W
l Inner circuit
l Features
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Embossed
Tape
Packing
l Application
Type
Switching
Reel size (mm)
330
Tape width (mm)
24
Basic ordering unit (pcs)
Taping code
1000
TL
Marking
R6020KNJ
l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
VDSS
600
V
ID*1
±20
A
Pulsed drain current
IDP*2
±60
A
±20
V
±30
V
Gate - Source voltage
static
VGSS
AC(f＞1Hz)
Avalanche current, single pulse
IAS
3.4
A
Avalanche energy, single pulse
Power dissipation (Tc = 25°C)
EAS*3
418
mJ
PD
231
W
Tj
150
℃
Tstg
-55 to +150
℃
Junction temperature
Operating junction and storage temperature range
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© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001 R6020KNJ
l Thermal resistance
Datasheet
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC*4
-
-
0.54
℃/W
Thermal resistance, junction - ambient
RthJA*5
-
-
80
℃/W
Tsold
-
-
265
℃
Soldering temperature, wavesoldering for 10s
l Electrical characteristics (Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
Symbol
Conditions
Typ.
Max.
600
-
-
VDS = 600V, VGS = 0V
Tj = 25°C
-
-
100
Tj = 125°C
-
-
1000
IGSS
VGS = ±20V, VDS = 0V
-
-
±100
nA
VGS(th)
VDS = 10V, ID = 1mA
3
-
5
V
VGS = 10V, ID = 9.5A
Tj = 25°C
-
0.170 0.196
Tj = 125°C
-
0.36
-
f = 1MHz, open drain
-
2.3
-
V(BR)DSS
IDSS
RDS(on)*6
RG
VGS = 0V, ID = 1mA
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© 2015 ROHM Co., Ltd. All rights reserved.
Unit
Min.
2/12
V
μA
Ω
Ω
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
VDS = 10V, ID = 10A
5
10
-
Forward Transfer
Admittance
|Yfs| *6
Input capacitance
Ciss
VGS = 0V
-
1550
-
Output capacitance
Coss
VDS = 25V
-
1350
-
Reverse transfer capacitance
Crss
f = 1MHz
-
55
-
VDD ⋍ 300V, VGS = 10V
-
30
-
tr*6
ID = 10A
-
30
-
td(off)*6
RL ⋍ 30Ω
-
55
-
tf*6
RG = 10Ω
-
10
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on)*6
S
pF
ns
l Gate charge characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg*6
VDD ⋍ 300V
-
40
-
Gate - Source charge
Qgs*6
ID = 20A
-
12
-
Gate - Drain charge
Qgd*6
VGS = 10V
-
15
-
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 20A
-
6.4
-
nC
V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃
*4 TC=25℃
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Continuous forward
current
Values
Conditions
IS*1
Unit
Min.
Typ.
Max.
-
-
20
A
-
-
60
A
-
-
1.5
V
-
500
-
ns
-
7.5
-
μC
-
38
-
A
TC = 25℃
Pulse forward current
ISP*2
Forward voltage
VSD*6
Reverse recovery time
trr*6
Reverse recovery charge
Qrr*6
Peak reverse recovery current
Irrm*6
VGS = 0V, IS = 20A
IS = 20A
di/dt = 100A/μs
l Typical transient thermal characteristics
Symbol
Value
Rth1
0.068
Rth2
0.261
Rth3
0.607
Unit
K/W
Symbol
Value
Cth1
0.00213
Cth2
0.00766
Cth3
0.195
Unit
Ws/K
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© 2015 ROHM Co., Ltd. All rights reserved.
4/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Avalanche Energy Derating
Curve vs. Junction Temperature
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© 2015 ROHM Co., Ltd. All rights reserved.
5/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
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© 2015 ROHM Co., Ltd. All rights reserved.
6/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristic curves
Fig.6 Breakdown Voltage vs.
Junction Temperature
Fig.7 Typical Transfer Characteristics
Fig.8 Gate Threshold Voltage vs.
Junction Temperature
Fig.9 Forward Transfer Admittance vs.
Drain Current
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© 2015 ROHM Co., Ltd. All rights reserved.
7/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristic curves
Fig.10 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(l)
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© 2015 ROHM Co., Ltd. All rights reserved.
8/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristic curves
Fig.13 Typical Capacitance vs.
Drain - Source Voltage
Fig.14 Switching Characteristics
Fig.15 Dynamic Input Characteristics
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© 2015 ROHM Co., Ltd. All rights reserved.
9/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Electrical characteristic curves
Fig.16 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.17 Reverse Recovery Time vs.
Inverse Diode Forward Current
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© 2015 ROHM Co., Ltd. All rights reserved.
10/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 dv/dt Measurement Circuit
Fig.5-2 dv/dt Waveform
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© 2015 ROHM Co., Ltd. All rights reserved.
11/12
20150911 - Rev.001
R6020KNJ
Datasheet
l Dimensions
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© 2015 ROHM Co., Ltd. All rights reserved.
12/12
20150911 - Rev.001
Datasheet
R6020KNJ - Web Page
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Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
R6020KNJ
LPTS(D2PAK)
1000
1000
Taping
inquiry
Yes
Mouser Electronics
Authorized Distributor
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