Datasheet - STMicroelectronics
... The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. ...
... The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. ...
voltagesummary
... 1. Two resistors are placed in a series circuit with a 1.5 V Battery. In a series circuit the total battery voltage gets split up among the individual resistors. If you add each of the individual voltages together it will always equal the total voltage of the battery. Example ...
... 1. Two resistors are placed in a series circuit with a 1.5 V Battery. In a series circuit the total battery voltage gets split up among the individual resistors. If you add each of the individual voltages together it will always equal the total voltage of the battery. Example ...
AB88 Diode Clippers
... The circuit with which the waveform is shaped by removing (or clipping) a portion of the applied wave is known as a clipping circuits. This kind of processing is useful for signal shaping, circuit protection, radars, digital and other electronic systems. In other words clippers have the ability to “ ...
... The circuit with which the waveform is shaped by removing (or clipping) a portion of the applied wave is known as a clipping circuits. This kind of processing is useful for signal shaping, circuit protection, radars, digital and other electronic systems. In other words clippers have the ability to “ ...
Electronic Devices and Circuits
... voltage is applied. Eg: Paper, Mica, glass, quartz. Typical resistivity level of an insulator is of the order of 1010 to 1012 Ω-cm. The energy band structure of an insulator is shown in the fig.1.1. Band structure of a material defines the band of energy levels that an electron can occupy. Valance b ...
... voltage is applied. Eg: Paper, Mica, glass, quartz. Typical resistivity level of an insulator is of the order of 1010 to 1012 Ω-cm. The energy band structure of an insulator is shown in the fig.1.1. Band structure of a material defines the band of energy levels that an electron can occupy. Valance b ...
Clipper Datasheet V3
... 2 x SMA-SMA Adapter 1 x SMA-BNC Adapter (male) 1 x SMA-BNC Adapter (female) 4 x SMA sockets 1 x Aluminium case with ESD foam ...
... 2 x SMA-SMA Adapter 1 x SMA-BNC Adapter (male) 1 x SMA-BNC Adapter (female) 4 x SMA sockets 1 x Aluminium case with ESD foam ...
Understanding Basic Analog Passive Devices
... adjustments to correct for mechanical deficiencies in the display system and these adjustments can not be designed out. Pots have all the problems associated with fixed resistors, and they exacerbate some of them while introducing new ones. Pots are notorious for drifting under temperature, vibratio ...
... adjustments to correct for mechanical deficiencies in the display system and these adjustments can not be designed out. Pots have all the problems associated with fixed resistors, and they exacerbate some of them while introducing new ones. Pots are notorious for drifting under temperature, vibratio ...
Voltage definitions for phase control and bi
... Since the early beginnings of semiconductor devices, thermal runaway has been a well-known problem. Thermal runaway occurs when the power dissipation of a device increases rapidly with temperature. A classic example is thermal runaway during blocking, whereby the applied voltage generates a «leakage ...
... Since the early beginnings of semiconductor devices, thermal runaway has been a well-known problem. Thermal runaway occurs when the power dissipation of a device increases rapidly with temperature. A classic example is thermal runaway during blocking, whereby the applied voltage generates a «leakage ...
10ppm/°C, 1μA, 1.25V Shunt Voltage Reference
... Operating Temperature .................................................. –55°C to +125°C Storage Temperature ...................................................... –65°C to +150°C Junction Temperature .................................................................... +150°C ...
... Operating Temperature .................................................. –55°C to +125°C Storage Temperature ...................................................... –65°C to +150°C Junction Temperature .................................................................... +150°C ...
A Decade Bandwidth, Low Voltage, Medium Power Class B Push-
... WCDMA, 802.11 a/b/g/n, WiBro and WiMax are deployed or are expected to be widely adopted in the next few years. The ability to download high definition video, browse the internet, instant message in real time, and talk on the phone is quickly becoming an expectation of the average cell phone user. M ...
... WCDMA, 802.11 a/b/g/n, WiBro and WiMax are deployed or are expected to be widely adopted in the next few years. The ability to download high definition video, browse the internet, instant message in real time, and talk on the phone is quickly becoming an expectation of the average cell phone user. M ...
pptx
... – Similar to the capacitor, but an inductor is used to store energy due to current flow. This in turn maintains a constant current or is used to limit the rate of change of current flow. – This will also determine the peak to peak current in the circuit which affects the transistor, diode and the “m ...
... – Similar to the capacitor, but an inductor is used to store energy due to current flow. This in turn maintains a constant current or is used to limit the rate of change of current flow. – This will also determine the peak to peak current in the circuit which affects the transistor, diode and the “m ...
N-channel 600 V, 0.13 typ., 21 A MDmesh™ DM2 Power MOSFET in
... This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ...
... This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ...
BDTIC TLF50211EL 2.2MHz Buck Converter 5V, 500mA, with Enable and Low Quiescent...
... dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components ca ...
... dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components ca ...
Performance Analysis of CMOS OTA
... Transconductance of 8 mS which makes it very suitable for microwave frequency applications. When the characteristic lengths of CMOS devices are scaled down, both their channel delays and capacitive parasitic are reduced, which increases the cut off frequencies of the transistors. This ultimately res ...
... Transconductance of 8 mS which makes it very suitable for microwave frequency applications. When the characteristic lengths of CMOS devices are scaled down, both their channel delays and capacitive parasitic are reduced, which increases the cut off frequencies of the transistors. This ultimately res ...
1 Attachment A Whitepaper on Semiconductor Die and Packaging
... As is the case with plastic and ceramic packages, there are also a number of different standard metal packages. TO-3 is a designation for a standardized metal semiconductor package used for transistors and some integrated circuits. The “TO” element stands for "transistor outline" and refers to a ser ...
... As is the case with plastic and ceramic packages, there are also a number of different standard metal packages. TO-3 is a designation for a standardized metal semiconductor package used for transistors and some integrated circuits. The “TO” element stands for "transistor outline" and refers to a ser ...
FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET FSEZ10 16A
... The green-mode function with a low startup current (10µA) maximizes the light-load efficiency so the power supply can meet stringent standby power regulations. Compared with conventional secondary-side regulation approach; the FSEZ1016A can reduce total cost, ...
... The green-mode function with a low startup current (10µA) maximizes the light-load efficiency so the power supply can meet stringent standby power regulations. Compared with conventional secondary-side regulation approach; the FSEZ1016A can reduce total cost, ...
BC847PN Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
NCP392C - Adjustable Front End Overvoltage
... SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any ...
... SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any ...
Pulse-Width Modulation Control Circuits
... The TL494 incorporates all the functions required in the construction of a pulse-width-modulation (PWM) control circuit on a single chip. Designed primarily for power-supply control, this device offers the flexibility to tailor the power-supply control circuitry to a specific application. The TL494 ...
... The TL494 incorporates all the functions required in the construction of a pulse-width-modulation (PWM) control circuit on a single chip. Designed primarily for power-supply control, this device offers the flexibility to tailor the power-supply control circuitry to a specific application. The TL494 ...
LM122 LM322 LM3905 Precision Timers
... present a minimum load on external signals tied to VADJ. This resistor is a pinched type with a typical variation in nominal value of b50%, a 100% and a TC of 0.7%/§ C. For this reason, external signals (typically a pot between VREF and ground) connected to VADJ should have a source resistance as lo ...
... present a minimum load on external signals tied to VADJ. This resistor is a pinched type with a typical variation in nominal value of b50%, a 100% and a TC of 0.7%/§ C. For this reason, external signals (typically a pot between VREF and ground) connected to VADJ should have a source resistance as lo ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.