BCX5616Q Description Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
N-diffusion
... Provide feature size independent way of setting out mask If design rules are obeyed, masks will produce working circuits Minimum feature size is defined as 2 λ Used to preserve topological features on a chip Prevents shorting, opens, contacts from slipping out of area to be contacted ...
... Provide feature size independent way of setting out mask If design rules are obeyed, masks will produce working circuits Minimum feature size is defined as 2 λ Used to preserve topological features on a chip Prevents shorting, opens, contacts from slipping out of area to be contacted ...
MMSD3070 Small Signal Diode MMSD3070 — Small Signal Diode
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
TL720M05-Q1 Low-Dropout Voltage Regulator
... Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. ...
... Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. ...
Enhancement Loads
... Resistors take up far too much space on integrated circuit substrates. Therefore, we need to make a resistor out of a transistor! Q: How can we do that!? After all, a resistor is a two terminal device, whereas a transistor is a three terminal device. A: We can make a two terminal device from a MOSFE ...
... Resistors take up far too much space on integrated circuit substrates. Therefore, we need to make a resistor out of a transistor! Q: How can we do that!? After all, a resistor is a two terminal device, whereas a transistor is a three terminal device. A: We can make a two terminal device from a MOSFE ...
TD352
... gate voltage goes below 2 V (relative to VL). The clamp voltage is VL+4V max for a Miller current up to 500 mA. The clamp is disabled when the IN input is triggered again. The CLAMP function does not affect the turn-off characteristic, but only keeps the gate at low level throughout the off time. Th ...
... gate voltage goes below 2 V (relative to VL). The clamp voltage is VL+4V max for a Miller current up to 500 mA. The clamp is disabled when the IN input is triggered again. The CLAMP function does not affect the turn-off characteristic, but only keeps the gate at low level throughout the off time. Th ...
Powering Microcontrollers from Industrial Supply Rails
... Figure 9 below shows the output voltage, switching waveform and inductor current at 5mA and 50mA load condition with different input voltages. It can be seen that the inductor peak current increases with higher input voltages due to comparator propagation delay. At 24V, one current pulse is sufficie ...
... Figure 9 below shows the output voltage, switching waveform and inductor current at 5mA and 50mA load condition with different input voltages. It can be seen that the inductor peak current increases with higher input voltages due to comparator propagation delay. At 24V, one current pulse is sufficie ...
Lecture 7
... The gain of the inverter actually increases with a reduction of VDD . At a VDD =0.5V, which is just 100mV above V T of the transistors. So why can’t we operate all digital circuits at low V DD values? • Yes, you get lower power consumption. But the delay of the gate drastically increases. • DC chara ...
... The gain of the inverter actually increases with a reduction of VDD . At a VDD =0.5V, which is just 100mV above V T of the transistors. So why can’t we operate all digital circuits at low V DD values? • Yes, you get lower power consumption. But the delay of the gate drastically increases. • DC chara ...
FNA21012A 1200 V Motion SPM 2 Series F
... The FNA21012A is a Motion SPM® 2 module providing a fully-featured, high-performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection featur ...
... The FNA21012A is a Motion SPM® 2 module providing a fully-featured, high-performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection featur ...
SIGC101T170R3E
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
SIGC84T120R3LE
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
Guide Specification for Ashley-Edison SES Single Phase AC
... Output Impedance - The output impedance shall be typically 3%. ...
... Output Impedance - The output impedance shall be typically 3%. ...
DATA SHEET PHE13007 Silicon Diffused Power Transistor
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to r ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to r ...
DTD513ZE
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
AP8803 Description Pin Assignments
... Inductor Selection A 33μH inductor (or higher) is recommended for most AP8803 applications with input voltage at 24V. Figure 3 displays the resulting switching frequency varying the main circuit parameters: Supply voltage, inductor value and number of LEDs to be driven. In particular, the graph in F ...
... Inductor Selection A 33μH inductor (or higher) is recommended for most AP8803 applications with input voltage at 24V. Figure 3 displays the resulting switching frequency varying the main circuit parameters: Supply voltage, inductor value and number of LEDs to be driven. In particular, the graph in F ...
LNK362-364 rev_E.indd
... 2. For designs where PO ≤ 2 W, a two-layer primary should be used to ensure adequate primary intra-winding capacitance in the range of 25 pF to 50 pF. 3. For designs where 2 < PO ≤ 2.5 W, a bias winding should be added to the transformer using a standard recovery rectifier diode to act as a clamp. T ...
... 2. For designs where PO ≤ 2 W, a two-layer primary should be used to ensure adequate primary intra-winding capacitance in the range of 25 pF to 50 pF. 3. For designs where 2 < PO ≤ 2.5 W, a bias winding should be added to the transformer using a standard recovery rectifier diode to act as a clamp. T ...
Chap3
... To best describe the pn junction diode under reverse bias conditions, the diode is modelled to have a current source exciting it. This current is k ept lower than Is to keep the diode from experiencing breakdown. The current (I) will be carried by electrons that move (in the opposite direction of I) ...
... To best describe the pn junction diode under reverse bias conditions, the diode is modelled to have a current source exciting it. This current is k ept lower than Is to keep the diode from experiencing breakdown. The current (I) will be carried by electrons that move (in the opposite direction of I) ...
MDB10SV 1.2 A, 1000 V, Micro-DIP, Single-Phase Bridge Rectifier , Micro-
... With the ever-pressing need to improve power supply efficiency and reliability, the MDB10SV sets a new standard in small form-factor, efficient, robust, bridge rectifier performance. The design offers improved efficiency by achieving a 1.2 A VF of 1.015 V maximum at 25°C. This lower VF results in co ...
... With the ever-pressing need to improve power supply efficiency and reliability, the MDB10SV sets a new standard in small form-factor, efficient, robust, bridge rectifier performance. The design offers improved efficiency by achieving a 1.2 A VF of 1.015 V maximum at 25°C. This lower VF results in co ...
SMV-500 - Astrodyne
... spike noise. Also, note that output spike voltage may vary depending on the wiring pattern of the printed circuit board. C16,17: 0.033uF (Ceramic or Film Capacitor): Connect ceramic or film capacitor as EMI/EMS counter measure and to reduce spike noise. Note: High Voltage is applied across this capa ...
... spike noise. Also, note that output spike voltage may vary depending on the wiring pattern of the printed circuit board. C16,17: 0.033uF (Ceramic or Film Capacitor): Connect ceramic or film capacitor as EMI/EMS counter measure and to reduce spike noise. Note: High Voltage is applied across this capa ...
SMV-500 - EP
... spike noise. Also, note that output spike voltage may vary depending on the wiring pattern of the printed circuit board. C16,17: 0.033uF (Ceramic or Film Capacitor): Connect ceramic or film capacitor as EMI/EMS counter measure and to reduce spike noise. Note: High Voltage is applied across this capa ...
... spike noise. Also, note that output spike voltage may vary depending on the wiring pattern of the printed circuit board. C16,17: 0.033uF (Ceramic or Film Capacitor): Connect ceramic or film capacitor as EMI/EMS counter measure and to reduce spike noise. Note: High Voltage is applied across this capa ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.