μ PD166020T1F Data Sheet
... harness can be large. This energy has to be taken into consideration for the safe operation. The following figure shows the condition for EAS2, the maximum switch-off energy (single pulse) for abnormally high current. ...
... harness can be large. This energy has to be taken into consideration for the safe operation. The following figure shows the condition for EAS2, the maximum switch-off energy (single pulse) for abnormally high current. ...
In this paper, a new single-phase cascaded multilevel inverter is
... positive levels at the output. Therefore, an H-bridge is added to the proposed inverter. This inverter is called the developed cascaded multilevel inverter. In order to generate all voltage levels (even and odd) at the output, four different algorithms are proposed to determine the magnitude of dc v ...
... positive levels at the output. Therefore, an H-bridge is added to the proposed inverter. This inverter is called the developed cascaded multilevel inverter. In order to generate all voltage levels (even and odd) at the output, four different algorithms are proposed to determine the magnitude of dc v ...
GaN Technology for High Frequency Applications
... Combine Microprocessor with Monolithic Power Supply On-wafer wireless transmitters Driver stages for on-wafer optoelectronics Power amplifiers coupled to Si linearizer circuits High speed (high power) differential amplifiers Normally-off power transistors New enhancement-mode power transistors Buffe ...
... Combine Microprocessor with Monolithic Power Supply On-wafer wireless transmitters Driver stages for on-wafer optoelectronics Power amplifiers coupled to Si linearizer circuits High speed (high power) differential amplifiers Normally-off power transistors New enhancement-mode power transistors Buffe ...
Silicon Detectors
... The parameter a and b are given by the design of the (pre)-amplifier. C is the detector capacitance at ! the input of the amplifier channel.! Integration time tp is crucial, short integration time leads usually to larger a and b values. Integration time is depending on the accelerator time structure ...
... The parameter a and b are given by the design of the (pre)-amplifier. C is the detector capacitance at ! the input of the amplifier channel.! Integration time tp is crucial, short integration time leads usually to larger a and b values. Integration time is depending on the accelerator time structure ...
A Comparison Between RF MEMS Switches and Semiconductor
... We have worked on improving the performance of microwave switches for several years [1–3]. Over that time MEMS devices have become a focus for research in microwave switches [4–6]. For a review of RF MEMS devices see [7]. While it is generally accepted that mechanical switches offer superior isolati ...
... We have worked on improving the performance of microwave switches for several years [1–3]. Over that time MEMS devices have become a focus for research in microwave switches [4–6]. For a review of RF MEMS devices see [7]. While it is generally accepted that mechanical switches offer superior isolati ...
LTC3866-Current Mode Synchronous Controller for Sub Milliohm
... step-down switching regulator controller that drives all N-channel power MOSFET switches. It employs a unique architecture which enhances the signal-to-noise ratio of the current sense signal, allowing the use of a very low DC resistance power inductor to maximize the efficiency in high current appl ...
... step-down switching regulator controller that drives all N-channel power MOSFET switches. It employs a unique architecture which enhances the signal-to-noise ratio of the current sense signal, allowing the use of a very low DC resistance power inductor to maximize the efficiency in high current appl ...
TPS65130 数据资料 dataSheet 下载
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
Rev. A - Texas Instruments
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
Improved Deadbeat Current Controller with a Repetitive
... A predictive current controller is often adopted to compensate for the time delay [15], [16]. However, the one-step predictive current method is essentially an open-loop current observer and the prediction error is not converged as in [16]. The current predictive value is influenced by factors such ...
... A predictive current controller is often adopted to compensate for the time delay [15], [16]. However, the one-step predictive current method is essentially an open-loop current observer and the prediction error is not converged as in [16]. The current predictive value is influenced by factors such ...
TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
... TLC27L4 and TLC27L9. The devices also exhibit low voltage single-supply operation and ultra-low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is ...
... TLC27L4 and TLC27L9. The devices also exhibit low voltage single-supply operation and ultra-low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is ...
TPS70302 数据资料 dataSheet 下载
... terminal low reverses the power-up order and VOUT1 is turned on first. The SEQ pin is connected to an internal pull-up current source. For each regulator, there is an internal discharge transistor to discharge the output capacitor when the regulator is turned off (disabled). The PG1 pin reports the ...
... terminal low reverses the power-up order and VOUT1 is turned on first. The SEQ pin is connected to an internal pull-up current source. For each regulator, there is an internal discharge transistor to discharge the output capacitor when the regulator is turned off (disabled). The PG1 pin reports the ...
A Guide To Describe The Occurrence and Mitigation Of Switching
... the slope m of this curve was stated to be between 15 and 30, with 25 suggested as most typical for the systems used in power transformers. The form or relationship of this curve is valid not only for oil-paper systems, but also for most insulation systems in general. Therefore, by using the one hou ...
... the slope m of this curve was stated to be between 15 and 30, with 25 suggested as most typical for the systems used in power transformers. The form or relationship of this curve is valid not only for oil-paper systems, but also for most insulation systems in general. Therefore, by using the one hou ...
TPS70702 数据资料 dataSheet 下载
... regulators are sensed at the VSENSE1 and VSENSE2 pins, respectively. The input signal at the SEQ pin controls the power-up sequence of the two regulators. When the device is enabled and the SEQ terminal is pulled high or left open, VOUT2 turns on first and VOUT1 remains off until VOUT2 reaches appro ...
... regulators are sensed at the VSENSE1 and VSENSE2 pins, respectively. The input signal at the SEQ pin controls the power-up sequence of the two regulators. When the device is enabled and the SEQ terminal is pulled high or left open, VOUT2 turns on first and VOUT1 remains off until VOUT2 reaches appro ...
General Soldering Temperature Process Guidelines
... circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for an ...
... circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for an ...
FPF1005-FPF1006 IntelliMAX Advanced Load Management Products F
... A 0.1µF capacitor, COUT, should be placed between VOUT and GND. This capacitor will prevent parasitic board inductance from forcing VOUT below GND when the switch turns-off. Due to the integral body diode in the PMOS switch, a CIN greater than COUT is highly recommended. A COUT greater than CIN can ...
... A 0.1µF capacitor, COUT, should be placed between VOUT and GND. This capacitor will prevent parasitic board inductance from forcing VOUT below GND when the switch turns-off. Due to the integral body diode in the PMOS switch, a CIN greater than COUT is highly recommended. A COUT greater than CIN can ...
MAX17021/MAX17082/MAX17482 Dual-Phase, Quick-PWM Controllers for IMVP-6+/IMVP-6.5 CPU Core Power Supplies General Description
... VCC, VDD, V3P3 to GND ...........................................-0.3V to +6V D0–D6 to GND..........................................................-0.3V to +6V PGDIN, DPRSLPVR, PSI to GND..............................-0.3V to +6V DPRSTP (MAX17021) to GND ..................................-0.3V to + ...
... VCC, VDD, V3P3 to GND ...........................................-0.3V to +6V D0–D6 to GND..........................................................-0.3V to +6V PGDIN, DPRSLPVR, PSI to GND..............................-0.3V to +6V DPRSTP (MAX17021) to GND ..................................-0.3V to + ...
FZT655 Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
ISL24202 - Intersil
... circuit using a mechanical potentiometer, and the equivalent circuit replacement using the ISL24202. Having a digital counter interface enables automatic, digital flicker minimization during production test and alignment. After programming, the counter interface is not needed again - the ISL24202 au ...
... circuit using a mechanical potentiometer, and the equivalent circuit replacement using the ISL24202. Having a digital counter interface enables automatic, digital flicker minimization during production test and alignment. After programming, the counter interface is not needed again - the ISL24202 au ...
PD166013T1J Data Sheet INTELLIGENT POWER DEVICE
... source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. ...
... source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. ...
MM74C14 Hex Schmitt Trigger
... 1. Life support devices or systems are devices or systems device or system whose failure to perform can be reawhich, (a) are intended for surgical implant into the sonably expected to cause the failure of the life support body, or (b) support or sustain life, and (c) whose failure device or system, ...
... 1. Life support devices or systems are devices or systems device or system whose failure to perform can be reawhich, (a) are intended for surgical implant into the sonably expected to cause the failure of the life support body, or (b) support or sustain life, and (c) whose failure device or system, ...
Understanding IDRIVE and TDRIVE in TI Motor Gate Drivers (Rev. A)
... The metal-oxide-semiconductor field-effect transistor, or MOSFET, is the most common transistor used in present-day electronic-circuit design. The MOSFET has many properties that make it useful in a variety of applications. These properties include scalability, low turnon current, high switching spe ...
... The metal-oxide-semiconductor field-effect transistor, or MOSFET, is the most common transistor used in present-day electronic-circuit design. The MOSFET has many properties that make it useful in a variety of applications. These properties include scalability, low turnon current, high switching spe ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.