A 0.18um CMOS Dual-Band UWB Transceiver
... of 300MHz. A low-pass feedback network is used to reject the DC offset with resulted cut-off frequency of 200kHz. The demodulator is implemented with two squarers and one nonlinear low-pass filter (NLPF), as illustrated in Fig. 6.2.4. Here, the input stage M7/M8 (M9/M10), common-mode input stage M17 ...
... of 300MHz. A low-pass feedback network is used to reject the DC offset with resulted cut-off frequency of 200kHz. The demodulator is implemented with two squarers and one nonlinear low-pass filter (NLPF), as illustrated in Fig. 6.2.4. Here, the input stage M7/M8 (M9/M10), common-mode input stage M17 ...
Microcomputer Control Systems I
... Fig. 2: Examples of Karnaugh maps for 2 to 5 variables. Functional values of the logical function are entered in the Karnaugh map so that to the corresponding field in the map, type 1 (if the function value is equal to 1) or 0 (if the functional value is undefined) for each combination of input vari ...
... Fig. 2: Examples of Karnaugh maps for 2 to 5 variables. Functional values of the logical function are entered in the Karnaugh map so that to the corresponding field in the map, type 1 (if the function value is equal to 1) or 0 (if the functional value is undefined) for each combination of input vari ...
Linköping University Post Print Power consumption of analog circuits: a tutorial
... So, Veff thus have a lower bound given by VFSin or Av0 B, whichever give the largest bound. Choosing Veff equal to this lower bound gives minimum current consumption for achieving the required gm calculated from eq. (14). Finally, we should strive for the largest possible voltage and current efficie ...
... So, Veff thus have a lower bound given by VFSin or Av0 B, whichever give the largest bound. Choosing Veff equal to this lower bound gives minimum current consumption for achieving the required gm calculated from eq. (14). Finally, we should strive for the largest possible voltage and current efficie ...
Lab 2
... 2.4 Unlike resistors, diodes allow current to flow only in one direction. To identify the direction of current flow, measure the resistance of the given diode using the multimeter in both directions. Mark the terminals as + and - (the current ...
... 2.4 Unlike resistors, diodes allow current to flow only in one direction. To identify the direction of current flow, measure the resistance of the given diode using the multimeter in both directions. Mark the terminals as + and - (the current ...
Input and Output Characteristics of Digital Integrated Circuits at 3.3-V
... Because the input characteristics depend exclusively on the technology used, not on the logical function of the device, only one representative per logic family is shown (gate function ’00 or driver function ’240) in the input-characteristics section. Section 4 of this application report presents th ...
... Because the input characteristics depend exclusively on the technology used, not on the logical function of the device, only one representative per logic family is shown (gate function ’00 or driver function ’240) in the input-characteristics section. Section 4 of this application report presents th ...
IRF3205 HEXFET ® Power MOSFET
... VGS=0V, ID=250µA Reference to 25℃, ID=1mA VGS=10V, ID=62A ④ VDS=VGS, ID=250µA VDS=25V, ID=62A ④ VDS=55V, VGS=0V VDS=44V, VGS=0V, TJ=150℃ VGS=20V VGS=-20V ID=62A VDS=44V VGS=10V, See Fig.6 and 13 VDD=28V ID=62A ...
... VGS=0V, ID=250µA Reference to 25℃, ID=1mA VGS=10V, ID=62A ④ VDS=VGS, ID=250µA VDS=25V, ID=62A ④ VDS=55V, VGS=0V VDS=44V, VGS=0V, TJ=150℃ VGS=20V VGS=-20V ID=62A VDS=44V VGS=10V, See Fig.6 and 13 VDD=28V ID=62A ...
What is current measured in
... potential difference). The ratio of potential difference across a component to the current flowing through it. By measuring the current through it with an ammeter; and the potential difference of the component with a voltmeter and then dividing the p.d. by the current. Characteristic curves. They ar ...
... potential difference). The ratio of potential difference across a component to the current flowing through it. By measuring the current through it with an ammeter; and the potential difference of the component with a voltmeter and then dividing the p.d. by the current. Characteristic curves. They ar ...
Lab3- BJT-Simulation - Department of Applied Engineering
... A well-known method of understanding the operation of a transistor circuit is to investigate the output and how it responds to a specified input. For the NPN BJT transistor, one typically wishes to examine how the output (the collector current) behaves when the collector to emitter voltage (VCE) swe ...
... A well-known method of understanding the operation of a transistor circuit is to investigate the output and how it responds to a specified input. For the NPN BJT transistor, one typically wishes to examine how the output (the collector current) behaves when the collector to emitter voltage (VCE) swe ...
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... The input uses a small CMOS inverter stage with a low input capacitance, so no drive energy is needed. The output LOW is bipolar (Q4) with a small (M7) in parallel, and the output HIGH is a combination of a bipolar transistor (Q2) and PMOS (M4) to pull the output to the full Vcc. Bipolar transistors ...
... The input uses a small CMOS inverter stage with a low input capacitance, so no drive energy is needed. The output LOW is bipolar (Q4) with a small (M7) in parallel, and the output HIGH is a combination of a bipolar transistor (Q2) and PMOS (M4) to pull the output to the full Vcc. Bipolar transistors ...
Mar 2008 - Voltage and Current Monitoring from 7V to 80V in 3mm × 3mm DFN-10
... simplifies design, while desirable features, such as 12-bit resolution, high ...
... simplifies design, while desirable features, such as 12-bit resolution, high ...
Electronic Circuits – EE359A
... Figure 11.11 (a) Diodes at each input of a two-input CMOS gate. (b) Equivalent diode circuit when the two inputs of the gate are joined together. Note that the diodes are intended to protect the device gates from potentially destructive overvoltages due to static charge accumulation. ...
... Figure 11.11 (a) Diodes at each input of a two-input CMOS gate. (b) Equivalent diode circuit when the two inputs of the gate are joined together. Note that the diodes are intended to protect the device gates from potentially destructive overvoltages due to static charge accumulation. ...
MMSD4148 Small Signal Diode
... support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use prov ...
... support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use prov ...
ADG467 数据手册DataSheet下载
... circuit, the PMOS transistor enters a saturated mode of operation as the drain voltage exceeds VSS – VTP. See Figure 20 below. As in the case of the positive overvoltage, the other MOS devices are nonsaturated. NEGATIVE OVERVOLTAGE (–20V) NEGATIVE OVERVOLTAGE (–20V) ...
... circuit, the PMOS transistor enters a saturated mode of operation as the drain voltage exceeds VSS – VTP. See Figure 20 below. As in the case of the positive overvoltage, the other MOS devices are nonsaturated. NEGATIVE OVERVOLTAGE (–20V) NEGATIVE OVERVOLTAGE (–20V) ...
BPR-23-D - アイステーシス
... voltage swing of up to 700 mVpp, therefore, the receiver is well suited for OC-768/STM-256 system operating up to 43 Gbit/s or for analog applications where balanced input PDs are needed. Excellent electrical and optical phase propagation is achieved by a total skew of lower than 2 ps between the ba ...
... voltage swing of up to 700 mVpp, therefore, the receiver is well suited for OC-768/STM-256 system operating up to 43 Gbit/s or for analog applications where balanced input PDs are needed. Excellent electrical and optical phase propagation is achieved by a total skew of lower than 2 ps between the ba ...
UNISONIC TECHNOLOGIES CO., LTD TDA2030A
... voltage less than the maximum value fixed by the IC breakdown voltage. It is essential to take into account all the working conditions, in particular mains fluctuations and supply voltage variations with and without load. The UTC TDA2030A(Vsmax=44V) is particularly suitable for substitution of the s ...
... voltage less than the maximum value fixed by the IC breakdown voltage. It is essential to take into account all the working conditions, in particular mains fluctuations and supply voltage variations with and without load. The UTC TDA2030A(Vsmax=44V) is particularly suitable for substitution of the s ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.