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Chapter 33
Chapter 33

... (b) Explain how “CIVIL” works as another mnemonic device, where V represents voltage. 3. Why is the sum of the maximum voltages across each element in a series RLC circuit usually greater than the maximum applied voltage? Doesn’t that inequality violate Kirchhoff’s loop rule? 4. (a) Does the phase a ...
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Chapter 20
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PHYS 3322 Modern Laboratory Methods 1
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How to Design a Boost Converter With the TPS61170 Application Report ......................................................................................
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AN-679 APPLICATION NOTE
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ICL8038
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... small deviations (e.g. ±10%) the modulating signal can be applied directly to pin 8, merely providing DC decoupling with a capacitor as shown in Figure 5A. An external resistor between pins 7 and 8 is not necessary, but it can be used to increase input impedance from about 8kΩ (pins 7 and 8 connecte ...
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Exercise 2 - DMCS Pages for Students

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BDTIC T D A 4 8 6 3

... reduce power losses. But such transistors have typically large capacitances Ciss, Coss, and Crss according to Figure 1. Especially in power factor correction (PFC) preconverters this issue is even more dramatically, because there are points of operation, at which the drain-source-voltage is very low ...
EX-504 - ITM GOI
EX-504 - ITM GOI

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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