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JFET Biasing
JFET Biasing

... • JFETs can be used as voltage controlled switches for switching low-level analog signals. • As seen in the previous slide, the control signal is digital: on or off. • JFETs can be used as series switches or as shunt switches. • When used as a switch, the key JFET parameter is RDS(on), the resistanc ...
RS-485 for E-Meter Applications (Rev. A)
RS-485 for E-Meter Applications (Rev. A)

... RS-485 signaling has several advantages for energy meter applications. Because differential drivers and receivers are used, external noise sources, such as 50/60 Hz ac and high-frequency (HF) interference, are rejected. Ideally, noise is coupled equally onto both lines (common mode), and therefore t ...
A Comparative Study of a Dielectric-Defined Process
A Comparative Study of a Dielectric-Defined Process

TPS65142 LCD Bias Power Integrated with
TPS65142 LCD Bias Power Integrated with

Fundamentals of Linear Electronics Integrated & Discrete
Fundamentals of Linear Electronics Integrated & Discrete

XC1700Product Specification V4.0 (1/96)
XC1700Product Specification V4.0 (1/96)

... LCA device is used only for configuration, it must still be held at a defined level during normal operation. The XC3000 and XC4000 families take care of this automatically with an on-chip default pull-up resistor. With XC2000-family devices, the user must either configure DIN as an active output, or ...
REVIEW OF COMPLEX NUMBERS
REVIEW OF COMPLEX NUMBERS

second break down
second break down

... difference being 0.3-04V for the same forward current density. In the reverse direction, a schottky diode has much larger reverse leakage current compared to a p-n junction diode. The break down voltage is also considerably lower (<200v). After break down it exhibits resistance like characteristics. ...
ZXMN4A06K 40V N-channel enhancement mode MOSFET Summary Description
ZXMN4A06K 40V N-channel enhancement mode MOSFET Summary Description

... ZXMN4A06K 40V N-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON) = 0.05; ID = 10.9A ...
PPT - Electrical and Computer Engineering
PPT - Electrical and Computer Engineering

PPT - Electrical and Computer Engineering
PPT - Electrical and Computer Engineering

AM26LV32 数据资料 dataSheet 下载
AM26LV32 数据资料 dataSheet 下载

... In most applications, it is not customary to have a common-mode input close to ground and to have a differential voltage larger than 2 V. Since the common-mode input voltage is typically around 1.5 V, a 2-V VID would result in a VIL of 0.5 V, thus satisfying the recommended VIL level of greater than ...
TPS54350 数据资料 dataSheet 下载
TPS54350 数据资料 dataSheet 下载

... The TPS54350 is a medium output current synchronous buck PWM converter with an integrated high side MOSFET and a gate driver for an optional low side external MOSFET. Features include a high performance voltage error amplifier that enables maximum performance under transient conditions and flexibili ...
DET: Technological Studies
DET: Technological Studies

... assessment requirements for this aspect. Centres should ensure that when candidates are carrying out the practical activity for assessment purposes, appropriate conditions are in place. Assessment of the computer simulation aspect can be done using the assignments provided in the support materials. ...
TPS40054 数据资料 dataSheet 下载
TPS40054 数据资料 dataSheet 下载

... controller is considered shut down when VSS/SD is 125 mV or less. The internal circuitry is enabled when VSS/SD is 210 mV or greater. When VSS/SD is less than approximately 0.85 V, the outputs cease switching and the output voltage (VO) decays while the internal circuitry remains active. ...
FEATURES DESCRIPTION D
FEATURES DESCRIPTION D

... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
30A Range Bidirectional Current Shunt Monitor
30A Range Bidirectional Current Shunt Monitor

i 2
i 2

... resolved into simple circuits containing parallel or series resistors.  To handle these types of circuits, we must apply ...
M48T129V
M48T129V

... With valid VCC applied, the M48Z129Y/V operates as a conventional BYTEWIDE™ static RAM. Should the supply voltage decay, the RAM will automatically deselect, write protecting itself when VCC falls between VPFD (max), VPFD (min) window. All outputs become high impedance and all inputs are treated as ...
PSpice Tutorial - Purdue Engineering
PSpice Tutorial - Purdue Engineering

Two-Phase Synchronous Buck Controller w
Two-Phase Synchronous Buck Controller w

1.1 Special Diodes PN junction diodes are the most
1.1 Special Diodes PN junction diodes are the most

... 2. The forward voltage drop of a conducting SBD is lower than that of a pnjunction diode. For example, an SBD made of silicon exhibits a forward voltage drop of 0.3 V to 0.5 V, compared to the 0.6 V to 0.8 V found in silicon /wz-junction diodes. SBDs can also be made of gallium arsenide (GaAs) and, ...
http://leadacidbatterydesulfation
http://leadacidbatterydesulfation

iraudamp4a
iraudamp4a

... countermeasures is to drive both of the channels out of phase so that one channel consumes the energy flow from the other and does not return it to the power supply. Bus voltage detection is only done on the –B supply as the effect of the bus pumping on the supplies is assumed to be symmetrical in a ...
16-Bit Bus Transceivers And Registers With 3
16-Bit Bus Transceivers And Registers With 3

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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