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ET3034TUx -‐ 2.2.1 – Band Gap I: Electrons in Atoms
ET3034TUx -‐ 2.2.1 – Band Gap I: Electrons in Atoms

... Before   we   will   discuss   the   silicon   atom,   I   am   starting   with   the   most   simple   atom   in   our   universe,  the  hydrogen  atom.     The  hydrogen  atom  has  a  nucleus  consisting  of  one  proton.     The ...
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... c) The wave function in part (a) is ⟨x|E, α⟩ (i.e., the projection on to the x-basis of the energy and momentum eigenket |E, α⟩). Derive the normalisation N such that the eigenkets {|E, α⟩} are orthonormal (i.e., ⟨E, α|E ′ , α′ ⟩ = δ(E − E ′ ) δα,α′ ). d) A particle is in the state ψ(x) = N + eipx/h ...
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... Finally, suppose we start with a state Ψ(x, 0) = (1/ 2)[ψ1 (x) + ψ2 (x)], and we let this state evolve in time. At any point in time, the state Ψ(x, t) will be some mixture of ψ1 (x) and ψ2 (x), and this mixture changes with time. Now, at some specific instance in time t, we measure the energy and o ...
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< 1 ... 92 93 94 95 96 97 98 99 100 ... 231 >

Tight binding

In solid-state physics, the tight-binding model (or TB model) is an approach to the calculation of electronic band structure using an approximate set of wave functions based upon superposition of wave functions for isolated atoms located at each atomic site. The method is closely related to the LCAO method used in chemistry. Tight-binding models are applied to a wide variety of solids. The model gives good qualitative results in many cases and can be combined with other models that give better results where the tight-binding model fails. Though the tight-binding model is a one-electron model, the model also provides a basis for more advanced calculations like the calculation of surface states and application to various kinds of many-body problem and quasiparticle calculations.
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